Experimental Results (1)

In the previous two webinars, we used the FDD8882 and Si4410DY MOSFETs. Unfortunately, neither MOSFET models reverse recovery. The TT parameter in each model is less than 2n:

FDD8882:
.MODEL DbodyMOD D (IS=2E-12 IKF=10 N=1.01 RS=5.7e-3 TRS1=8e-4 TRS2=2e-7 + CJO=4.6e-10 M=0.58 TT=1e-11 XTI=2.7)
Si4410DY:
.MODEL DBD D(Bv=33.60 Ibv=2.50E-04 Rs=1E-6 Is=1.54455180641662e-08 N=1 M=0.45 VJ=0.69 Fc=0.5 Cjo=9.67e-10 Tt=1.868e-09)

This is the most challenging aspect of modeling reverse recovery: The inability to obtain realistic measured data.